Q 12-14-147JEE MainJEE Main 2021 (22 Jul, Shift 1)Easy
Consider a situation in which reverse biased current of a particular P-N junction increases when it is exposed to a light of wavelength $\le 621$ nm. During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly.
Answer: (A) 2 eV
$E_g = \dfrac{hc}{\lambda_{max}} = \dfrac{1240\ \text{eV nm}}{621\ \text{nm}} \approx 2$ eV
Solution by Sreeraj P, M.Sc Physics